NDH8304P Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Dual P-Channel Enhancement Mode Field Effect Transistor

NDH8304P
Dual P-Channel Enhancement Mode Field Effect Transistor
May 1997
General Description
SuperSOT^TM-8 P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as notebook computer power management
and other battery powered circuits where fast high-side
switching, and low in-line power loss are needed in a very small
outline surface mount package.
Features
-2.7 A, -20 V. R_DS(ON) = 0.07 Ω @ V_GS = -4.5 V
R_DS(ON) = 0.095 Ω @ V_GS = -2.7 V.
Proprietary SuperSOT^TM-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R_DS(ON).
Exceptional on-resistance and maximum DC current
capability.
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5
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
(Note 1)
P_D
Maximum Power Dissipation
(Note 1)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1)
R_θJC
Thermal Resistance, Junction-to-Case (Note 1)
© 1997 Fairchild Semiconductor Corporation
NDH8304P
-20
±8
-2.7
-10
0.8
-55 to 150
156
40
Units
V
V
A
W
°C
°C/W
°C/W
NDH8304P Rev.C