NDH8301N Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – Dual N-Channel Enhancement Mode Field Effect Transistor

December 1996
NDH8301N
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage applications such
as notebook computer power management, and other battery
powered circuits where fast switching, and low in-line power
loss are needed in a very small outline surface mount package.
Features
3 A, 20 V. R_DS(ON) = 0.06 Ω @ V_GS = 4.5 V
R_DS(ON) = 0.075 Ω @ V_GS = 2.7 V.
Proprietary SuperSOT^TM-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R_DS(ON).
Exceptional on-resistance and maximum DC current
capability.
____________________________________________________________________________________________
5
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A = 25°C unless otherwise note
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
(Note 1)
P_D
Maximum Power Dissipation
(Note 1 )
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)
NDH8301N
20
8
3
15
0.8
-55 to 150
156
40
Units
V
V
A
W
°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDH8301N Rev.E