NDF0610 Datasheet, PDF (1/13 Pages) Fairchild Semiconductor – P-Channel Enhancement Mode Field Effect Transistor

April 1995
NDF0610 / NDS0610
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process has been designed to minimize on-state resistance,
provide rugged and reliable performance and fast switching.
They can be used, with a minimum of effort, in most
applications requiring up to 180mA DC and can deliver
pulsed currents up to 1A. This product is particularly suited
to low voltage applications requiring a low current high side
switch.
Features
-0.18 and -0.12A, -60V. R_DS(ON) = 10Ω
Voltage controlled p-channel small signal switch
High density cell design for low R_DS(ON)
TO-92 and SOT-23 packages for both through hole and
surface mount applications
High saturation current
____________________________________________________________________________________________
DGS
TO-9 2
NDF0610
D
S
SOT-23
NDS0610
G
S
G
D
Absolute Maximum Ratings
Symbol Parameter
T_A = 25°C unless otherwise noted
NDF0610
V_DSS
Drain-Source Voltage
V_DGR
Drain-Gate Voltage (R_GS < 1 MΩ)
V_GSS
Gate-Source Voltage - Continuous
- Nonrepetitive (t_P < 50 µs)
I_D
Drain Current - Continuous
- Pulsed
P_D
Maximum Power Dissipation T_A = 25°C
Derate above 25°C
-0.18
0.8
5
T_J,T_STG Operating and Storage Temperature Range
T_L
Maximum lead temperature for soldering
purposes, 1/16" from case for 10 seconds
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient
200
-60
-60
±20
±30
-1
-55 to 150
300
NDS0610
-0.12
0.36
2.9
350
Units
V
V
V
V
A
W
mW/^oC
°C
°C
°C/W
© 1998 Fairchild Semiconductor Corporation
NDS0610.SAM