MTP3055VL Datasheet, PDF (1/3 Pages) Motorola, Inc – TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM

June 2000
DISTRIBUTION GROUP*
MTP3055VL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET has been designed
specifically for low voltage, high speed switching
applications i.e. power supplies and power motor
controls.
This MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable R_DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies).
Features
• 12 A, 60 V. R_DS(ON) = 0.18 Ω @ V_GS = 5 V
• Critical DC electrical parameters specified at elevated
temperature.
• Low drive requirements allowing operation directly from
logic drivers. Vgs(th) < 2 V.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
• 175°C maximum junction temperature rating.
D
G
D
TO-220
G
S
Absolute Maximum Ratings ^TC ^{= 25°C unless otherwise noted}
Symbol
Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
P_D
T_J, T_STG
Power Dissipation @ T_C = 25_°C
Derate above 25_°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_{θ JC}
Thermal Resistance, Junction-to- Case
R_{θ JA}
Thermal Resistance, Junction-to- Ambient
(Note 1)
S
Ratings
60
±¹⁵
12
42
48
0.32
-65 to +175
3.13
62.5
Package Outlines and Ordering Information
Device Marking
Device
MTP3055VL
MTP3055VL
* Die and manufacturing source subject to change without prior notification.
1999 Fairchild Semiconductor Corporation
Package Information
Rails/Tubes
Units
V
V
A
W
W/_°C
°^C
°^C/W
°^C/W
Quantity
45 units
MTP3055VL Rev. A1