MPSA28 Datasheet, PDF (1/4 Pages) Motorola, Inc – Darlington Transistor

Discrete POWER & Signal
Technologies
MPSA28
MMBTA28
PZTA28
C
BE
TO-92
C
SOT-23
Mark: 3SS
E
B
C
SOT-223
E
C
B
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 500 mA. Sourced
from Process 03.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CES
Collector-Emitter Voltage
80
VCBO
Collector-Base Voltage
80
V_EBO
Emitter-Base Voltage
12
I_C
T_J, T_stg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
800
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
MPSA28
*MMBTA28
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JC
Thermal Resistance, Junction to Case
625
350
5.0
2.8
83.3
Rθ_JA
Thermal Resistance, Junction to Ambient
200
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².
**PZTA28
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation