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| MPSA05 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amplifier Transistors | |||
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MPSA05/MMBTA05
NPN General Purpose Amplifier
⢠This device is designed for general purpose amplifier
applications at collector currents to 300mA.
⢠Sourced from process 10.
3
1
TO-92
1. Emitter 2. Base 3. Collector
2
SOT-23
1 Mark: 1H
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
- Continuous
Value
60
60
4.0
500
-55 ~ +150
Units
V
V
V
mA
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage *
V(BR)EBO
Emitter-Base Breakdown Voltage
ICEO
Collector Cutoff Current
ICBO
Emitter Cutoff Current
On Characteristics
IC = 1mA, IB = 0
IC = 100µA, IC = 0
VCE = 60V, IB = 0
VCB = 60V, IE = 0
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
Small Signal Characteristics
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
IC = 100mA, IB = 10mA
IC = 100mA, VCE = 1.0V
fT
Current Gain Bandwidth Product
* Pulse Test: Pulse Width ⤠300µs, Duty Cycle ⤠2.0%
IC = 10mA, VCE = 2V,
f = 100MHz
Min. Typ. Max. Units
60
V
4
V
0.1 µA
0.1 µA
100
100
0.25 V
1.2 V
100
MHz
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6â Ã 0.06"
Max.
MPSA05
*MMBTA05
625
350
5
2.8
83.3
200
357
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
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