MPS751 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Silicon PNP Transistor

MPS751
Silicon PNP Transistor (Note 1)
• Low Saturation Voltage
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
V_CEO
I_C
P_C
T_J
T_STG
Collector-Emitter Voltage
Collector Current (DC)
Collector Dissipation (T_a=25°C) (Note 2, 3)
Junction Temperature
Storage Temperature
1
TO-92
1. Emitter 2. Base 3. Collector
Value
-60
2
625
150
- 55 ~ 150
Units
V
A
mW
°C
°C
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
BV_CBO
Collector-Base Voltage
I_C = 100µA
-80
BV_CEO
Collector-Emitter Voltage
I_C = 10mA
-60
BV_EBO
Emitter-Base Voltage
I_E = 10µA
-5
I_CBO
Collector Cut-off Current
V_CB = 30V
I_EBO
Emitter Cut-off Current
V_EB = 3V
h_FE
DC Current Gain
V_CE = 2V, I_C = 50mA
75
V_CE = 2V, I_C = 500mA
75
V_CE = 2V, I_C = 1A
75
V_CE = 2V, I_C = 2A
40
V_CE(sat)
Collector-Emitter Saturation Voltage
I_C = 2A, I_B = 200mA
I_C = 1A, I_B = 100mA
V_BE(sat)
Base-Emitter Saturation Voltage
I_C = 1A, I_B = 100mA
V_BE(on)
Base-Emitter On Voltage
V_CE = 5V, I_C = 2mA
f_T
Current gain Bandwidth Product
V_CE = 5V, I_C = 50mA
75
f = 100MHz
Notes:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings are based on a maximum junction temperature of 150degrees C.
Typ.
Max.
100
100
Units
V
V
V
nA
nA
0.5 V
0.3
1.2 V
1
V
MHz
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002