MPS6521 Datasheet, PDF (1/3 Pages) Motorola, Inc – Amplifier Transistors

MPS6521
NPN General Purpose Amplifier
• This device is deisgned for general purpose amplifier applications at
collector to 300mA.
• Sourced from process 10.
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CEO
V_CBO
V_EBO
I_C
T_J, T_STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
1
TO-92
1. Emitter 2. Base 3. Collector
Value
25
40
4.0
100
- 55 ~ 150
Units
V
V
V
mA
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)CEO
Collector-Emitter Sustaining Voltage *
V_(BR)EBO
Emitter-Base Breakdown Voltage
I_CBO
Emitter Cutoff Current
On Characteristics
I_C = 500µA, I_B = 0
I_E = 10µA, I_C = 0
V_CB = 30V, I_E = 0
h_FE
DC Current Gain
V_CE(sat)
Collector-Emitter Saturation Voltage
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
V_CE = 10V, I_C = 100µA
V_CE = 10V, I_C = 2.0mA
I_C = 50mA, I_B = 5.0mA
Thermal Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5
83.3
200
Min. Max. Units
25
V
4
V
50
nA
150
300
600
0.5
V
Units
mW
mW/°C
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, November 2003