MPS6514 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

MPS6514
NPN General Purpose Amplifier
• This device is designed as a general purpose
amplifier and switch.
• The useful dynamic range extends to 100mA as a
switch and to 100MHz as an amplifier.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings* T_a=25°C unless otherwise noted
Symbol
Parameter
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector current
- Continuous
T_J, T_stg
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
25
40
4.0
200
-55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Units
V
V
V
mA
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)CEO
Collector-Emitter Breakdown Voltage
V_(BR)CBO
Collector-Base Breakdown Voltage
V_(BR)EBO
Emitter-Base Breakdown Voltage
I_CBO
Collector Cutoff Current
I_CBO
Collector Cutoff Current
On Characteristics *
I_C = 0.5mA, I_B = 0
I_C =10µA, I_E = 0
I_C = 10µA, I_C = 0
V_CE = 30V, I_E = 0
V_CB = 30V, I_E = 0, T = 100°C
h_FE
DC Current Gain
V_CE(sat)
Collector-Emitter Saturation Voltage
Small Signal Characteristics
I_C = 2.0mA, V_CE = 10V
I_C = 100mA, V_CE = 10V
I_C = 50mA, I_B = 5.0mA
C_obo
Output Capacitance
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
V_CB = 10V, I_E = 0, f = 100kHz
Min. Max. Units
25
V
40
V
4.0
V
50
nA
1.0
µA
150
300
90
0.5
V
3.5
pF
Thermal Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, May 2004