MPS651 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (VOLTAGE REGULATOR RELAY RAMP DRIVER, INDUSTRIAL USE)

MPS651
Switching and Amplifier Applications
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE1
h_FE2
h_FE3
h_FE4
V_CE (sat)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
V_BE (sat)
V_BE (on)
f_T
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Band Width Product
I_C=100µA, I_E=0
I_C=10mA, I_B=0
I_C=10µA, I_C=0
V_CB=80V, I_E=0
V_EB=4.0V, I_C=0
V_CE=2V, I_C=50mA
V_CE=2V, I_C=500mA
V_CE=2V, I_C=1.0A
V_CE=2V, I_C=2.0A
I_C=1.0A, I_B=100mA
I_C=2.0A, I_B=200mA
I_C=1.0A, I_B=100mA
V_CE=2.0V, I_C=1.0A
V_CE=5.0V, I_C=50mA,
f=100MHz
1
TO-92
1. Emitter 2. Base 3. Collector
Ratings
80
60
5
0.8
625
150
-55 ~ 150
Units
V
V
V
A
mW
°C
°C
Min.
80
60
5
75
75
75
40
75
Typ.
Max.
0.1
0.1
Units
V
V
V
µA
µA
300
mV
500
1.2
V
1.0
V
MHz
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002