MPS5179 Datasheet, PDF (1/4 Pages) ON Semiconductor – High Frequency Transistor(NPN Silicon)

Discrete POWER & Signal
Technologies
MPS5179
MMBT5179
PN5179
C
C
BE
TO-92
SOT-23
Mark: 3C
E
B
C
EB
TO-92
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers
with collector currents in the 100 µA to 30 mA range in common
emitter or common base mode of operation, and in low frequency
drift, high ouput UHF oscillators. Sourced from Process 40.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
12
V_CBO
Collector-Base Voltage
20
V_EBO
Emitter-Base Voltage
2.5
I_C
Collector Current - Continuous
50
T_J, T_stg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
PN/MPS5179
350
2.8
357
*MMBT5179
225
1.8
556
Units
mW
mW/°C
°C/W
© 1997 Fairchild Semiconductor Corporation
5179, Rev B