MPF102_04 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – N-Channel RF Amplifier

MPF102
N-Channel RF Amplifier
• This device is designed for electronic switching applications such as
low ON resistance analog switching.
• Sourced from process 50.
1
TO-92
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings * T_a=25°C unless otherwise noted
Symbol
Parameter
V_DG
Drain-Gate Voltage
V_GS
Gate-Source Voltage
I_GF
Forward Gate Current
T_J, T_STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
Value
25
-25
10
- 55 ~ +155
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Units
V
V
mA
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)GSS
Gate-Source Breakdown Voltage
I_GSS
Gate Reverse Current
V_gs(off)
Gate-Source Cutoff Voltage
V_gs
Gate-Source Voltage
On Characteristics *
I_G = -1.0µA, V_DS = 0
V_GS = -15V, V_DS = 0
V_DS = 15V, I_D = 2nA
V_DS = 15V, I_D = 200µA
I_DSS
Zero-Gate Voltage Drain Current
g_fs
Forward Transconductance
Small Signal Characteristics
V_DS = 15V, V_GS = 0
V_GS = 0V, V_DS = 15V, f = 1kHz
C_iss
Common-Source Input Capacitance
V_GS = 0, V_DS = 15V, f = 1MHz
C_rss
Common-Source Reverse Transfer
V_GS = 0, V_DS = 15V, f = 1MHz
Capacitance
Min.
-25
-0.5
2.0
2000
Max.
-2.0
-8.0
-7.5
20
7500
7.0
3.0
Units
V
nA
V
V
mA
µS
pF
pF
Thermal Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. B, October 2004