MPF102 Datasheet, PDF (1/3 Pages) Motorola, Inc – JFET VHF Amplifier

MPF102
G
TO-92
SD
N-Channel RF Amplifier
This device is designed for electronic switching
Applications such as low ON resistance analog switching.
Sourced from Process 50.
Absolute Maximum Ratings * TA=25 degree C unless otherwise noted
Symbol
Parameter
Value
VDG
Drain-Gate Voltage
25
VGS
Gate-Source Voltage
-25
IGF
Forward Gate Current
10
TJ,Tstg
Operating and Storage Junction Temperature Range
-55 to + 155
Units
V
V
mA
degree C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25 degrees C unless otherwise noted.
Symbol
Characteristic
Max
Units
PD
Total Device Dissipation
Derate above 25 degrees C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.5” X 1.6” X 0.06”
350
mW
2.8
mW/degrees C
125
degrees C/W
357
degrees C/W
©1999 Fairchild Semiconductor Corporation