MOCD211-M Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – DUAL CHANNEL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS

DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD211-M
DESCRIPTION
The MOCD211-M device consists of two gallium arsenide infrared emitting diodes optically coupled to
two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It
is ideally suited for high density applications and eliminates the need for through-the-board mounting.
FEATURES
• U.L. Recognized (File #E90700, Volume 2)
• VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD211V-M)
• Minimum BV_CEO of 30 Volts Guaranteed
• Standard SOIC-8 Footprint, with 0.050" Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 V_AC(rms) Guaranteed
• Compact Dual Channel Optocoupler
ANODE 1 1
CATHODE 1 2
APPLICATIONS
• Interfacing and coupling systems of different potentials and impedances
• General purpose switching circuits
• Monitor and detection circuits
ANODE 2 3
CATHODE 2 4
8 COLLECTOR 1
7 EMITTER 1
6 COLLECTOR 2
5 EMITTER 2
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C Unless otherwise specified)
Rating
Symbol
Value
EMITTER
Forward Current - Continuous
Forward Current - Peak (PW = 100 µs, 120 pps)
Reverse Voltage
LED Power Dissipation @ T_A = 25°C
Derate above 25°C
DETECTOR
I_F
60
I_F (pk)
1.0
V_R
6.0
90
P_D
0.8
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current-Continuous
Detector Power Dissipation @ T_A = 25°C
Derate above 25°C
TOTAL DEVICE
Input-Output Isolation Voltage^(1,2,3)
(f = 60 Hz, 1 min. Duration)
V_CEO
V_ECO
I_C
P_D
V_ISO
30
7.0
150
150
1.76
2500
Total Device Power Dissipation @ T_A = 25°C
Derate above 25°C
250
P_D
2.94
Ambient Operating Temperature Range
Storage Temperature Range
T_A
-40 to +100
T_stg
-40 to +125
Unit
mA
A
V
mW
mW/°C
V
V
mA
mW
mW/°C
Vac(rms)
mW
mW/°C
°C
°C
© 2003 Fairchild Semiconductor Corporation
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5/28/03