MOC70P1 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH

MOC70P1 / MOC70P2 / MOC70P3
PHOTOTRANSISTOR OPTICAL
INTERRUPTER SWITCH
PACKAGE DIMENSIONS
0.510 [12.95]
0.250 [6.35]
0.506 [12.85]
0.153 [3.89] 2X
0.200 [5.08] NOM
0.080 [2.03] NOM
CL
0.270 [6.86]
0.140 [3.56]
0.105 [2.67]
PIN 2 CATHODE
0.380 [9.65]
0.050 [1.27]
SEATING PLANE
0.020 [0.51] 4 X
PIN 3 (COLLECTOR)
0.100 [2.54]
PIN 1 (ANODE)
PIN 4 (EMITTER)
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
DESCRIPTION
The MOC70PX consists of an infrared
light emitting diode coupled to an
NPN silicon phototransistor packaged
into an injection molded housing. The
housing is designed for wide gap, non
contact sensing.
FEATURES
• No contact sensing
• 5 mm gap
• .040” aperture
• Low profile
• PCB mount
• Transistor output
SCHEMATIC
1
4
2
3
NOTES
1. Derate power dissipation linearly, on each component, 1.67
mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as
cleaning agents.
4. Soldering iron tip 1/16” (1.6mm) from housing.
5. As long as leads are not under any stress or spring tension.
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)^(2,3,4,5)
Soldering Temperature (Flow)^(2,3,5)
EMITTER
Continuous Forward Current
Reverse Voltage
Power Dissipation⁽¹⁾
SENSOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power Dissipation⁽¹⁾
Symbol
T_OPR
T_STG
T_SOL-I
T_SOL-F
I_F
V_R
P_D
V_CEO
V_ECO
I_C
P_D
Rating
-55 to +100
-55 to +100
240 for 5 sec
260 for 10 sec
50
6
100
30
4.5
20
150
Units
°C
°C
°C
°C
mA
V
mW
V
V
mA
mW
 2001 Fairchild Semiconductor Corporation
DS300009 4/25/01
1 OF 5
www.fairchildsemi.com