MMSD914 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – High Conductance Fast Diode

MMSD914
General Description:
The high breakdown voltage, fast switching speed and high
forward conductance of this diode packaged in a SOD-123
Surface Mount package makes it desirable also as a general
purpose diode.
High Conductance
Fast Diode
Features:
• Compact surface mount with same footprint as mini-melf.
• 400 milliwatt Power Dissipation package.
• High Breakdown Voltage, Fast Switching Speed.
• Typical capacitance less than 1.5 picofarad.
Ordering:
• 7 inch reel (178 mm); 8 mm Tape; 3,000 units per reel.
Absolute Maximum Ratings* TA = 25^OC unless otherwise noted
Sym
Parameter
Value
T_stg
T_J
P_D
R_OJA
W_iv
I_O
I_F
i_F(surge)
Storage Temperature
Operating Junction Temperature
Total Power Dissipation at T_A = 25^OC
Linear Derating Factor from T_A = 25^OC
Thermal Resistance Junction-to-Ambient
Working Inverse Voltage
Average Rectified Current
DC Forward Current (IF)
Peak Forward Surge Current (IFSM) Pulse Width = 1.0 Second
Pulse Width = 1.0 microsecond
-55 to +150
-55 to +150
400
3.2
312
75
200
600
1.0
2.0
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
ELECTRICALLY THE SAME AS
THE FDLL914 DEVICE. SOURCED
FROM THE 1P PRODUCT.
Top Mark: 5D
1
Electrical Characteristics TA = 25^OC unless otherwise noted
Units
O_C
O_C
W
mW/^OC
O_C/W
V
mA
mA
Amp
Amp
2
Actual Size
SYM
CHARACTERISTICS
B_V Breakdown Voltage
I_R Reverse Leakage
V_F Forward Voltage
C_T Capacitance
T_RR Reverse Recovery Time
© 1999 Fairchild Semiconductor Corporation
MIN MAX UNITS
TEST CONDITIONS
100
75
25
50
5.0
1.0
4.0
4.0
V
I_R = 100 uA
V
I_R = 5.0 uA
nA V_R = 20 V
uA V_R = 20 V T_A = 150^OC
uA
V_R = 75 V
V
I_F = 10 mA
pF V_R = 0.0 V, f = 1.0 MHz
ns I_F = 10 mA V_R = 6.0 V
I_RR = 1.0 mA
R_L = 100 Ohms
MMSD914 - Rev. A