MMSD485B_11 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Small Signal Diode

MMSD485B
Small Signal Diode
August 2011
SOD123
Color Band Denotes Cathode
Top Marking: 28
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_RRM
Maximum Repetitive Reverse Voltage
100
V
I_F(AV)
Average Rectified Forward Current
200
mA
I_FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
1.0
A
Pulse Width = 1.0 microsecond
4.0
A
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature
-55 to +150
°C
150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Symbol
P_D
R_θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
400
312
Units
mW
°C/W
Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
V_R
Breakdown Voltage
I_R = 100μA
200
V_F
Forward Voltage
I_F = 100mA
I_R
Reverse Leakage
V_R = 180V
V_R = 180V, T_A = 150°C
C_T
Total Capacitance
V_R = 0, f = 1.0MHz
Max.
1.0
25
5.0
6.0
Units
V
V
nA
μA
pF
© 2011 Fairchild Semiconductor Corporation
MMSD485B Rev. A0
1
www.fairchildsemi.com