MMPQ6700 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Quad NPN & PNP General Purpose Amplifier

MMPQ6700
E
1
B
E2
1
B
E
2
B
3
E
B
4
4
3
C
C
C
1
1
C
2
C
2
C
3
C
3
C
4
4
SOIC-16
TRANSISTOR TYPE
C B E &C B E
1
1
1
2
2
2
NPN
C₃ B₃ E₃ & C₄ B₄ E₄
PNP
Quad NPN & PNP General Purpose Amplifier
These complimentary devices can be used in switches with collector currents of 10
µA to 100 mA. These devices are best used when space is the primary consideration.
Sourced from Process 23 & 66. See 2N3904 (NPN) & 2N3906 (PNP) for characteris-
tics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
40
VEBO
Emitter-Base Voltage
5.0
IC
Collector Current - Continuous
200
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
© 1997 Fairchild Semiconductor Corporation
Max
MMPQ6700
1000
8.0
125
240
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W