MMPQ6502 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Quad NPN & PNP General Purpose Amplifier

MMPQ6502
E ₁^B1E2
SOIC-16
E
B₂
B
3
E
3
B₄
4
C
1
C
C2
1
Pin #1
C
C
2
C
3
C
3
C
4
4
C₁
B₁
TRANSISTOR TYPE
E₁ & C₂ B₂ E₂
NPN
C₃ B₃ E₃ & C₄ B₄ E₄
PNP
Quad NPN & PNP General Purpose Amplifier
These complimentary devices can be used in medium power amplifiers, drivers and
switches with collector currents to 500 mA. These devices are best used when
space is the primary consideration. Sourced from Process 19 & 63. See PN2222A
(NPN) & PN2907A (PNP) for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
30
60
5.0
1.0
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
Max
MMPQ6502
1000
8.0
125
240
Units
V
V
V
A
°C
Units
mW
mW/°C
°C/W
°C/W
 1997 Fairchild Semiconductor Corporation
MMPQ6502, Rev B