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MMBZ5221B_11 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Zener Diodes
MMBZ5221B-MMBZ5257B
Zener Diodes
Tolerance = 5%
3
2
1
SOT-23
CONNECTION
DIAGRAM
3
1
2 NC
November 2011
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
Symbol
Parameter
Value
PD
Power Dissipation
350
TSTG
Storage Temperature Range
-55 to +150
TJ
Operating Junction Temperature
+150
* These ratings are limiting values above which the serviceability of the diode may be impaired.
Units
mW
°C
°C
NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Electrical Characteristics TA = 25°C unless otherwise noted
Device
Mark
Min.
VZ (V)
Nor.
Max. ZZ(Ω) @ IZ (mA)
MMBZ5221B 18A 2.28
2.4
2.52
30
20
MMBZ5223B 18C 2.565
2.7
2.835
30
20
MMBZ5226B
8A
3.135
3.3
3.465
28
20
MMBZ5227B 8B
3.42
3.6
3.78
24
20
MMBZ5228B
8C
3.705
3.9
4.095
23
20
MMBZ5229B
8D
4.085
4.3
4.515
22
20
ZZK(Ω) @ IZK(mA)
1,200 0.25
1,300 0.25
1,600 0.25
1,700 0.25
1,900 0.25
1,000 0.25
IR (μA) @ VR (V)
100
1.0
75
1.0
25
1.0
15
1.0
10
1.0
5.0
1.0
MMBZ5230B
8E
4.465
4.7
4.935
19
20
1,900 0.25
5.0
2.0
MMBZ5231B
8F
4.845
5.1
5.355
17
20
1,600 0.25
5.0
2.0
MMBZ5232B 8G
5.32
5.6
5.88
11
20
1,600 0.25
5.0
3.0
MMBZ5233B 8H
5.7
6.0
6.3
7.0
20
1,600 0.25
5.0
3.5
MMBZ5234B 8J
5.89
6.2
6.51
7.0
20
1,000 0.25
5.0
4.0
MMBZ5235B 8K
6.46
6.8
7.14
5.0
20
750
0.25
3.0
5.0
MMBZ5236B 8L 7.125 7.5 7.875 6.0
20
500
0.25
3.0
6.0
MMBZ5237B 8M
7.79
8.2
8.61
8.0
20
500
0.25
3.0
6.5
MMBZ5238B 8N 8.265 8.7 9.135 8.0
20
600
0.25
3.0
6.5
MMBZ5239B
8P
8.645
9.1
9.555
10
20
600
0.25
3.0
7.0
MMBZ5240B 8Q
9.5
10
10.5
17
20
600
0.25
3.0
8.0
MMBZ5241B 8R
10.45
11
11.55
22
20
600
0.25
2.0
8.4
MMBZ5242B 8S
11.4
12
12.6
30
20
600
0.25
1.0
9.1
VF Forward Voltage = 0.9V Maximum @ IF = 10mA for all MMBZ5200 series
© 2011 Fairchild Semiconductor Corporation
MMBZ5221B-MMBZ5257B Rev. B0
1
www.fairchildsemi.com