MMBTH10RG Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN RF Transistor

MMBTH10RG
NPN RF Transistor
• This device is designed for use in low noise UHF/VHF amplifiers, with
collector currents in the 100 µA to 20 mA range in common emitter or
common base mode of operations, and in low frequency drift, high
output UHF oscillators.
• Sourced from process 42.
C
E
SOT-23
B
Mark: 3E
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings* T_a=25°C unless otherwise noted
Symbol
Parameter
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
- Continuous
T_J, T_STG
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
40
40
4.0
50
-55 ~ 150
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)CEO Collector-Emitter Sustaining Voltage *
V_(BR)CBO Collector-Base Breakdown Voltage
V_(BR)EBO Emitter-Base Breakdown Voltage
I_CBO
Collector Cutoff Current
On Characteristics
I_C = 1.0 mA, I_B = 0
I_C = 10 µA, I_E = 0
I_E = 1.0 µA, I_C = 0
V_CB = 30 V, I_E = 0
h_FE
DC Current Gain
V_CE(sat)
Collector-Emitter Saturation Voltage
Small Signal Characteristics
I_C = 1.0 mA, V_CE = 6.0 V
I_C = 10 mA, I_B = 5.0 mA
f_T
Current Gain - Bandwidth Product
I_C = 2.0 mA, V_CE = 10 V,
f = 100 MHz
C_cb
rb’Cc
Collector-Base Capacitance
Collector Base Time Constant
* Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
V_CB = 10 V, I_E = 0, f = 1.0 MHz
I_C = 5.0 mA, V_CB = 10 V,
f = 79.8 MHz
Min.
40
40
4.0
50
450
Max.
100
120
0.2
0.6
12
Units
V
V
V
nA
V
V
MHz
pF
pS
Thermal Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max.
225
1.8
556
Units
mW
mW/°C
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004