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| MMBT6428 Datasheet, PDF (1/4 Pages) Samsung semiconductor – NPN (AMPLIFIER TRANSISTOR) | |||
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MMBT6428
NPN General Purpose Amplifier
⢠This device designed for general pupose amplifier applications at
collector currents to 300mA
⢠Sourced from process 10.
Absolute Maximum Ratings* TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
3
2
SOT-23
1 Mark: 1K
1. Base 2. Emitter 3. Collector
Value
50
60
500
- 55 ~ 150
Units
V
V
mA
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage *
V(BR)CBO
Collector-Base BreakdownVoltage
ICEO
Collector Cut-off Current
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
On Characteristics
IC = 1.0mA, IB = 0
IC = 100µA, IE = 0
VCE = 30V, IB = 0
VCB = 30V, IE = 0
VEB = 5.0V, IB = 0
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
Small Signal Characteristics
VCE = 5.0V, IC = 10µA
VCE = 5.0V, IC = 100µA
VCE = 5.0V, IC = 1.0mA
VCE = 5.0V, IC = 10mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
VCE = 5.0V, IC = 1.0mA
fT
Current gain Bandwidth Product
VCE = 5.0V, IC = 1.0mA,
f = 100MHz
Cobo
Output Capacitance
Cibo
Input Capacitance
*Pulse Test: Pulse Width ⤠300 µs, Duty Cycle ⤠2.0%
VCB = 10V, IE = 0, f = 1.0MHz
VEB = 0.5V, IC = 0, f = 1.0MHz
Min. Max. Units
50
V
60
V
0.1
µA
10
nA
10
nA
250
250
650
250
250
0.2
V
0.6
0.56 0.66
V
100
700 MHz
3.0
pF
8.0
pF
©2002 Fairchild Semiconductor Corporation
Rev. A, October 2002
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