MMBT5770 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – NPN RF Transistor

July 2007
MMBT5770
NPN RF Transistor
• This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.
• Sourced from process 43.
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings T_a = 25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
T_J, T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Value
30
15
4.5
10
-55 to +150
Thermal Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
P_D
R_θJC
R_θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4PCB 1.6” × 1.6” × 0.06”.
Max.
225
1.8
556
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)CBO Collector-Base Breakdown Voltage
V_CEO(sus) Collector-Emitter Sustaining Voltage*
V_(BR)EBO Emitter-Base Breakdown Voltage
I_CBO
Collector-Cutoff Current
On Characteristics *
IC = 1.0 μA, IE = 0
IC = 3.0 mA, IB = 0
IE = 10 μA, IC = 0
VCB = 15 V, IE = 0
h_FE
DC Current Gain
V_{CE (sat)} Collector-Emitter Saturation Voltage
V_{BE (sat)} Base-Emitter Saturation Voltage
Small Signal Characteristics
V_CE = 1.0V, I_C = 3.0mA
I_C = 10mA, I_B = 1.0mA
I_C = 10mA, I_B = 1.0mA
f_T
Current Gain Bandwidth Product
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
I_C = 4.0mA, V_CE = 10V, f = 100MHz
Min.
30
15
3
30
600
Units
V
V
V
nA
°C
Units
mW
mW/°C
°C/W
°C/W
Max. Units
V
V
V
50
nA
0.4
V
1.0
V
MHz
©2007 Fairchild Semiconductor Corporation
1
MMBT5770 Rev. A
www.fairchildsemi.com