MMBT5550 Datasheet, PDF (1/6 Pages) Zowie Technology Corporation – HIGH VOLTAGE TRANSISTOR NPN SILICON

MMBT5550
NPN General Purpose Amplifier
• This device is designed for general purpose high voltage amplifiers
and gas discharge display drivers.
August 2005
3
2
1
SOT-23
Marking: 1F
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
V_CBO
V_EBO
I_C
T_J, T_stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
- Continuous
Junction and Storage Temperature
140
160
6.0
600
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I_EBO
Emitter Cutoff Current
On Characteristics
h_FE
DC Current Gain
V_CE(sat)
V_BE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Test Condition
I_C = 1.0mA, I_B = 0
I_C = 100µA, I_E = 0
I_E = 10mA, I_C = 0
V_CB = 100V, I_E = 0
V_CB = 100V, I_E = 0, T_a = 100°C
V_EB = 4.0V, I_C = 0
I_C = 1.0mA, V_CE = 5.0V
I_C = 10mA, V_CE = 5.0V
I_C = 50mA, V_CE = 5.0V
I_C = 10mA, I_B = 1.0mA
I_C = 50mA, I_B = 5.0mA
I_C = 10mA, I_B = 1.0mA
I_C = 50mA, I_B = 5.0mA
Min.
140
160
6.0
60
60
20
Units
V
V
V
mA
°C
Max.
100
100
50
Units
V
V
V
nA
µA
nA
250
0.15
V
0.25
V
1.0
V
1.2
V
©2005 Fairchild Semiconductor Corporation
1
MMBT5550 Rev. A
www.fairchildsemi.com