MMBT5210 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

2N5210/MMBT5210
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
CBE
C
TO-92
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current - Continuous
T_J, T_stg
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
50
50
4.5
100
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
E
B SOT-23
Mark: 3M
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
Thermal Resistance, Junction to Case
R_θJA
Thermal Resistance, Junction to Ambient
Max.
2N5210
MMBT5210
625
350
5.0
2.8
83.3
200
357
Units
mW
mW/°C
°C/W
°C/W
 2002 Fairchild Semiconductor Corporation
2N5210, Rev B