MMBT4403K Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor

MMBT4403K
PNP Epitaxial Silicon Transistor
Switching Transistor
February 2005
3
Marking
2
SOT-23
1
1. Base 2. Emitter 3. Collector
2TK
Absolute Maximum Ratings T_a = 25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Value
-40
-40
-5
-600
350
150
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
BV_EBO
I_BEV
I_CEX
h_FE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
Base Cut-off Current
Collector Cut-off Current
DC Current Gain
V_{CE (sat)} Collector-Emitter Saturation Voltage *
V_{BE (sat)} Base-Emitter Saturation Voltage *
f_T
Current Gain Bandwidth Product
C_ob
Output Capacitance
t_ON
Turn On Time
t_OFF
Turn Off Time
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
I_C = -0.1mA, I_E = 0
I_C = -1.0mA, I_B = 0
I_E = -0.1mA, I_C = 0
V_CE = -35V, V_BE = -0.4V
V_CE = -35V, V_BE = -0.4V
V_CE = -1V, I_C = -0.1mA
V_CE = -1V, I_C = -1.0mA
V_CE = -1V, I_C = -10mA
V_CE = -2V, I_C = -150mA *
V_CE = -2V, I_C = -500mA *
I_C = -150mA, I_B = -15mA
I_C = -500mA, I_B = -50mA
I_C = -150mA, I_B = -15mA
I_C = -500mA, I_B = -50mA
I_C = -20mA, V_CE = -10V, f = 100MHz
V_CB = -10V, I_E = 0, f = 140KHz
V_CC = -30V, V_BE = -2V
I_C = -150mA, I_B1 = -15mA
V_CC = -30V, I_C = -150mA
I_B1 = I_B2= -15mA
Min.
-40
-40
-5
30
60
100
100
20
-0.75
200
Units
V
V
V
mA
mW
°C
Max.
-0.1
-0.1
Units
V
V
V
µA
µA
300
-0.4
-0.75
-0.95
-1.3
8.5
35
255
V
V
V
V
MHz
pF
ns
ns
©2005 Fairchild Semiconductor Corporation
1
MMBT4403K Rev. A
www.fairchildsemi.com