MMBT4356 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

MMBT4356
PNP General Purpose Amplifier
• This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 500mA.
• Sourced from process 67.
• See TN4033A for characteristics.
3
2
Absolute Maximum Ratings * T_A=25°C unless otherwise noted
Symbol
Parameter
V_CES
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector current
- Continuous
T_J, T_stg
Operating and Storate Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
SOT-23
1 _{Mark: 82}
1. Base 2. Emitter 3. Collector
Value
-80
-80
-5.0
-800
-55 ~ +150
Units
V
V
V
mA
°C
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJA
Thermal Resistance, Junction to Ambient
Max.
350
2.8
357
Units
mW
mW/°C
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002