MMBT3906SL Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor

February 2008
MMBT3906SL
C
PNP Epitaxial Silicon Transistor
Features
• General purpose amplifier transistor.
• Ultra small surface mount package for all types(max 0.43mm tall)
• Suitable for general switching & amplification
• Well suited for portable application
• As complementary type, NPN MMBT3904SL is recommended.
• Pb free
Absolute Maximum Ratings T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-40
V_CEO
Collector-Emitter Voltage
-40
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current
200
T_J
Junction Temperature
150
T_STG
Storage Temperature Range
-55 ~ 150
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* T_a=25°C unless otherwise noted
Symbol
Parameter
P_C
Collector Power Dissipation, by R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
* Minimum land pad.
Max
227
550
E
B
SOT-923F Marking : AB
Unit
V
V
V
mA
°C
°C
Unit
mW
°C/W
Electrical Characteristics* T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
BV_EBO
I_CEX
h_FE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
V_CE (sat)
Collector-Emitter Saturation Voltage
V_BE (sat)
Base-Emitter Saturation Voltage
f_T
Current Gain Bandwidth Product
C_ob
Output Capacitance
C_ib
Input Capacitance
t_d
Delay Time
t_r
Rise Time
t_s
Storage Time
t_f
Fall Time
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
I_C = -10μA, I_E = 0
I_C = -1mA, I_B = 0
I_E = -10μA, I_C = 0
V_CE = -30V, V_EB(OFF) =-0.3V
V_CE = 1V, I_C =- 0.1mA
V_CE = 1V, I_C = -1mA
V_CE = 1V, I_C = -10mA
V_CE = 1V, I_C = -50mA
V_CE = 1V, I_C = -100mA
I_C = -10mA, I_B = -1mA
I_C = -50mA, I_B = -5mA
I_C = -10mA, I_B = -1mA
I_C = -50mA, I_B = -5mA
V_CE = -20V, I_C = -10mA, f = 100MHz
V_CB = -5V, I_E = 0, f = 1MHz
V_EB = -0.5V, I_C = 0, f = 1MHz
V_CC = -3V, I_C = -10mA
I_B1 =- I_B2 = -1mA
Min.
-40
40
-5
60
80
100
60
30
-0.65
250
Max.
-50
300
-0.25
-0.4
-0.85
-0.95
7.0
15
35
35
225
75
Unit
V
V
V
nA
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
© 2007 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.0.0
1
www.fairchildsemi.com