MMBT3906K Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor

MMBT3906K
PNP Epitaxial Silicon Transistor
General Purpose Transistor
February 2005
3
Marking
2
SOT-23
1
1. Base 2. Emitter 3. Collector
2AK
Absolute Maximum Ratings T_a = 25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Value
-40
-40
-5
-200
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
BV_EBO
I_CEX
h_FE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain *
V_CE (sat) Collector-Emitter Saturation Voltage *
V_BE (sat) Base-Emitter Saturation Voltage *
f_T
Current Gain Bandwidth Product
C_ob
Output Capacitance
NF
Noise Figure
I_C = -10µA, I_E = 0
I_C = -1.0mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = -30V, V_EB = -3V
V_CE = -1V, I_C = -0.1mA
V_CE = -1V, I_C = -1mA
V_CE = -1V, I_C = -10mA
V_CE = -1V, I_C = -50mA
V_CE = -1V, I_C = -100mA
I_C = -10mA, I_B = -1mA
I_C = -50mA, I_B = -5.0mA
I_C = -10mA, I_B = -1.0mA
I_C = -50mA, I_B = -5.0mA
I_C = -10mA, V_CE = -20V, f = 100MHz
V_CB= -5V, I_E=0, f=1.0MHz
I_C = -100µA, V_CE = -5V, R_S = 1KΩ
f = 10Hz to 15.7KHz
t_ON
Turn On Time
t_OFF
Turn Off Time
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
V_CC = -3V, V_BE = -0.5V
I_C = -10mA, I_B1 = -1mA
V_CC = -3V, I_C = -10mA, I_B1 = I_B2 = -1mA
Min.
-40
-40
-5
60
80
100
60
30
-0.65
250
Max.
-50
Units
V
V
V
nA
300
-0.25
-0.4
-0.85
-0.95
4.5
4
V
V
V
V
MHz
pF
dB
70
ns
300
ns
©2005 Fairchild Semiconductor Corporation
1
MMBT3906K Rev. A
www.fairchildsemi.com