MMBT3904K Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor, General Purpose Transistor

MMBT3904K
NPN Epitaxial Silicon Transistor
General Purpose Transistor
February 2005
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Marking
1AK
Absolute Maximum Ratings T_a = 25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Value
60
40
6
200
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
BV_EBO
I_CEX
h_FE
V_CE(sat)
V_BE(sat)
C_ob
f_T
NF
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain *
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
I_C = 10µA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 30V, V_EB = 3V
V_CE = 1V, I_C = 0.1mA
V_CE = 1V, I_C = 1mA
V_CE = 1V, I_C = 10mA
V_CE = 1V, I_C = 50mA
V_CE = 1V, I_C = 100mA
I_C = 10mA, I_B = 1mA
I_C = 50mA, I_B = 5mA
I_C = 10mA, I_B = 1mA
I_C = 50mA, I_B = 5mA
V_CB = 5V, I_E = 0, f = 1MHz
V_CE = 20V, I_C = 10mA, f = 100MHz
I_C = 100µA, V_CE = 5V, R_S = 1KΩ
f = 10Hz to 15.7KHz
t_ON
Turn On Time
t_OFF
Turn Off Time
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
V_CC = 3V, V_BE = 0.5V
I_C = 10mA, I_B1 = 1mA
V_CC = 3V, I_C = 10mA, I_B1 = I_B2 = 1mA
Min.
60
40
6
40
70
100
60
30
0.65
300
Max.
50
Units
V
V
V
nA
300
0.2
V
0.3
V
0.85
V
0.95
V
4
pF
MHz
5
dB
70
ns
250
ns
©2005 Fairchild Semiconductor Corporation
1
MMBT3904K Rev. A
www.fairchildsemi.com