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MMBT3646 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Switching Transistor
MMBT3646
Switching Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
VCES
VCBO
VEBO
IC
PD
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Dissipation
- Derate above 25°C
- Continuous
@ TA=25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
V(BR)CES
Collector-Emitter Breakdown Voltage (IC = 100µAdc, VBE = 0)
VCEO(SUS)
Collector-Emitter Sustaining Voltage (1) (IC = 10mAdc, IB = 0)
V(BR)CBO
Collector-Base Breakdown Voltage (IC = 100µAdc, IE = 0)
V(BR)EBO
Emitter-Base Breakdown Voltage (IE = 100µAdc, IC = 0)
ICES
Collector Cut-off Current (VCE = 20Vdc, VBE = 0)
(VCE = 20Vdc, VBE = 0, TA = 65°C)
On Characteristics (1)
hFE
VCE(sat)
VBE(sat)
DC Current Gain (IC = 30mAdc, VCE = 0.4Vdc)
(IC = 100mAdc, VCE = 0.5Vdc)
(IC = 300mAdc, VCE = 1Vdc)
Collector-Emitter Saturation Voltage (IC = 30mAdc, IB = 3mAdc)
(IC = 100mAdc, IB = 10mAdc)
(IC = 300mAdc, IB = 30mAdc)
(IC = 30mA, IB = 3mA, TA =65°C)
Base-Emitter Saturation Voltage (IC = 30mAdc, IB = 3mAdc)
(IC = 100mAdc, IB = 10mAdc)
(IC = 300mAdc, IB = 30mAdc)
Value
15
40
40
5
300
625
5
150
Units
V
V
V
mA
mW
mW/°C
°C
Min. Typ. Max. Units
40
V
15
V
40
V
5
V
0.5 µA
3
30
120
25
15
0.2 V
0.28
0.5
0.3
0.73
0.95 V
1.2
1.7
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
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