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| MMBT2907AK Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor | |||
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MMBT2907AK
PNP Epitaxial Silicon Transistor
General Purpose Transistor
February 2005
3
Marking
2
SOT-23
1
1. Base 2. Emitter 3. Collector
2FK
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Value
-60
-60
-5
-600
350
150
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
hFE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
VCE (sat) Collector-Emitter Saturation Voltage *
VBE (sat) Base-Emitter Saturation Voltage *
fT
Current Gain Bandwidth Product
Cob
Output Capacitance
tON
Turn On Time
tOFF
Turn Off Time
* Pulse Test: Pulse Widthâ¤300µs, Duty Cycleâ¤2%
IC = -10µA, IE = 0
IC = -10mA, IB = 0
IE = -10µA, IC = 0
VCB = -50V, IE = 0
VCE = -10V, IC = -0.1mA
VCE = -10V, IC = -1.0mA
VCE = -10V, IC = -10mA
VCE = -10V, IC = -150mA *
VCE = -10V, IC = -500mA *
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
IC = -50mA, VCE = -20V, f = 100MHz
VCB = -10V, IE = 0, f = 1.0MHz
VCC = -30V, IC = -150mA
IB1 = -15mA
VCC = -6V, IC = -150mA
IB1 = IB2 = -15mA
Min.
-60
-60
-5
75
100
100
100
50
200
Units
V
V
V
mA
mW
°C
Max.
-0.01
Units
V
V
V
µA
300
-0.4
V
-1.6
V
-1.3
V
-2.6
V
MHz
8
pF
50
ns
110
ns
©2005 Fairchild Semiconductor Corporation
1
MMBT2907AK Rev. A
www.fairchildsemi.com
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