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| MMBT2222AT Datasheet, PDF (1/5 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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MMBT2222AT
NPN Epitaxial Silicon Transistor
Features
⢠General purpose amplifier transistor.
⢠Ultra-Small Surface Mount Package for all types.
⢠General purpose switching & amplification application
September 2008
C
E
B
Marking : A02
SOT-523F
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
75
VCEO
Collector-Emitter Voltage
40
VEBO
Emitter-Base Voltage
6
IC
Collector Current
600
TJ
Junction Temperature
150
TSTG
Storage Temperature Range
-55 ~ 150
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
PC
Collector Power Dissipation, by RθJA
RθJA
Thermal Resistance, Junction to Ambient
* Minimum land pad.
Max
250
500
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICEX
hFE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
IC = 10μA, IE = 0
IC = 1mA, IB = 0
IE = 10μA, IC = 0
VCE = 60V, VEB(OFF) = 3V
VCE = 1V, IC = 0.1mA
VCE = 1V, IC = 1mA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 150mA
Min.
75
40
6
35
50
75
100
VCE (sat)
Collector-Emitter Saturation Voltage
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
VBE (sat)
Base-Emitter Saturation Voltage
IC = 150mA, IB = 15mA
0.6
IC = 500mA, IB = 50mA
fT
Current Gain Bandwidth Product
VCE = 20V, IC = 20mA, f = 100MHz
300
Cob
Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
Cib
Input Capacitance
VEB = 0.5V, IC = 0, f = 1MHz
td
Delay Time
tr
Rise Time
VCC = 30V, IC = 150mA
IB1 =- IB2 = 15mA
ts
Storage Time
tf
Fall Time
* DC Item are tested by Pulse Test : Pulse Widthâ¤300us, Duty Cycleâ¤2%
Unit
V
V
V
mA
°C
°C
Unit
mW
°C/W
Max.
10
Unit
V
V
V
nA
0.3
V
1.0
V
1.2
V
2.0
V
MHz
8
pF
30
pF
10
ns
25
ns
225
ns
60
ns
© 2007 Fairchild Semiconductor Corporation
MMBT2222AT Rev. 1.0.0
1
www.fairchildsemi.com
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