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| MMBT2222AK Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor | |||
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MMBT2222AK
NPN Epitaxial Silicon Transistor
General Purpose Transistor
February 2005
3
Marking
2
SOT-23
1
1. Base 2. Emitter 3. Collector
1PK
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Value
75
40
6
600
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
hFE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain *
VCE (sat) Collector-Emitter Saturation Voltage *
VBE (sat) Base-Emitter Saturation Voltage *
fT
Current Gain Bandwidth Product
Cob
Output Capacitance
NF
Noise Figure
tON
Turn On Time
tOFF
Turn Off Time
* Pulse Test: Pulse Widthâ¤300µs, Duty Cycleâ¤2%
IC = 10µA, IE = 0
IC = 10mA, IB = 0
IE = 10µA, IC = 0
VCB = 60V, IE = 0
VCE = 10V, IC = 0.1mA
VCE = 10V, IC = 1mA
VCE = 10V, IC = 10mA
VCE = 10V, IC = 150mA
VCE = 10V, IC = 500mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 20mA, VCE = 20V, f = 100MHz
VCB = 10V, IE = 0, f = 1MHz
IC = 100µA, VCE = 10V
RS = 1Kâ¦, f = 1MHz
VCC = 30V, IC = 150mA
VBE = 0.5V, IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Min.
75
40
6
35
50
75
100
40
0.6
300
Max. Units
V
V
V
0.01
µA
300
0.3
V
1.0
V
1.2
V
2.0
V
MHz
8
pF
4
dB
35
ns
285
ns
©2005 Fairchild Semiconductor Corporation
1
MMBT2222AK Rev. A
www.fairchildsemi.com
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