MMBFJ305 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – N-Channel RF Amplifier

MMBFJ305
N-Channel RF Amplifier
Features
• This device is designed primarily for electronic switching
applications such as low On Resistance analog switching.
• Sourced from process 50.
July 2011
SOT-23
G
S
Marking : 6Q
D
Note : Drain & Source are interchangeable.
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_DG Drain-Gate Voltage
30
V
V_GS Gate-Source Voltage
-30
V
I_GF
Forward Gate Current
10
mA
T_J, T_STG Operating and Storage Junction Temperature Range
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics* T_A = 25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJA Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6” x 1.6” x 0.06”.
Value
225
1.8
556
Units
mW
mW/°C
°C/W
Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
V_(BR)GSS Gate-Source Breakdown Voltage
I_GSS Gate Reverse Current
V_GS(off) Gate-Source Cutoff Voltage
On Characteristics
I_G = -1.0μA, V_DS = 0
V_GS = -20V, V_DS = 0
V_DS = 15V, I_D = 1.0nA
I_DSS Zero-Gate Voltage Drain Current* V_DS = 15V, V_GS = 0
Small Signal Characteristics
gfs
Forward Transfer Conductance V_DS = 15V, V_GS = 0, f = 1.0kHz
g_OSS Output Conductance
V_DS = 15V, V_GS = 0, f = 1.0kHz
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Min.
-30
-0.5
1.0
3000
Max. Units
V
-100
pA
-3.0
V
8.0
mA
μmhos
50
μmhos
© 2011 Fairchild Semiconductor Corporation
MMBFJ305 Rev. A0
1
www.fairchildsemi.com