MMBFJ271 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – P-Channel Switch

MMBFJ271
P-Channel Switch
June 2006
tm
Features
• This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
• Sourced from process 88.
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
V_DG
Drain-Gate Voltage
-30
V_GS
Gate-Source Voltage
30
I_GF
Forward Gate Current
50
T_J, T_STG
Operating and Storage Junction Temperature Range
-55 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
- These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
G
S
D
SOT-23
Mark : 62T
Units
V
V
mA
°C
Thermal Characteristics
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJA
Thermal Resistance, Junction to Ambient
Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
Value
225
1.8
556
Units
mW
mW/°C
°C/W
Electrical Characteristics T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics (Note3)
V_(BR)GSS
Gate-Source Breakdwon Voltage
I_GSS
Gate Reverse Current
V_GS(off)
Gate-Source Cutoff Voltage
On Characteristics (Note3)
I_G = 1.0µA, V_DS = 0
V_GS = 20V, V_DS = 0
V_DS = -15V, I_D = -1.0nA
I_DSS
Zero-Gate Voltage Drain Current * V_DS = -15V, V_GS = 0
gfs
Forward Transferconductance
V_GS = 0V, V_DS = 15V, f = 1.0kHz
goss
Common- Source Output Conduc- V_GS = 0V, V_DS = 15V, f = 1.0kHz
tance
Note3 : Short duration test pulse used to minimize self-heating effect.
MIN
30
1.5
-6.0
8000
MAX
Units
V
200
pA
4.5
V
-50
18000
500
mA
µmhos
µmhos
©2006 Fairchild Semiconductor Corporation
1
MMBFJ271 Rev. A
www.fairchildsemi.com