MMBF5434 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – N-Channel Switch

MMBF5434
N-Channel Switch
• This device is designed for digital switching
applications where very low on resistance is
mandatory.
• Sourced from Process 58.
3
2
1
SuperSOT-3
Marking: 61Z
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings * T_A=25°C unless otherwise noted
Symbol
Parameter
V_DG
Drain-Gate Voltage
V_GS
Gate-Source Voltage
I_GF
Forward Gate Current
T_J, T_stg
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
25
-25
10
-55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)GSS Gate-Source Breakdwon Voltage
I_GSS
Gate Reverse Current
V_GS(off)
Gate-Source Cutoff Voltage
I_D(off)
Drain Cutoff Voltag
On Characteristics
I_G = -1.0µA, V_DS = 0
V_GS = -15V, V_DS = 0
V_DS = 5.0V, I_D = 3.0nA
V_DS = 5.0, V_GS = -10V
I_DSS
Zero-Gate Voltage Drain Current *
r_DS(on)
Drain-Source On Resistance
Small Signal Characteristics
V_DS = 15V, I_GS = 0
V_DS = 0, I_D = 10mA
C_iss
Input Capacitance
C_rss
Reverse Transfer Capacitance
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
V_DS = 0, V_GS = 10V, f = 1.0MHz
V_DS = 0, V_GS = 10V, f = 1.0MHz
Min. Max. Units
-25
V
200
nA
-1.0 -4.0
V
200
pA
30
mA
10
Ω
30
pF
15
pF
©2003 Fairchild Semiconductor Corporation
Rev. A, February 2003