MMBD701 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Schottky Barrier Diode

PACKAGE
SOT-23
TO-236AB (Low)
MMBD701
3
5HF
1
2
CONNECTION DIAGRAM
3
1
2 NC
PACKAGE
SOT-23
TO236AB
Schottky Barrier Diode
Sourced from Process GE
Absolute Maximum Ratings* TA = 25^OC unless otherwise noted
Sym
Parameter
Value
T_stg
Storage Temperature
T_J
Operating Junction Temperature
W_iv
Working Inverse Voltage
P_F
Forward Power Dissipation @ T_A = 25^OC
Derate above 25^OC
-55 to +150
-55 to +125
35
200
2.0
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
Units
O_C
O_C
V
mW
Mw/^OC
ADVANCED INFORMATION ONLY
NOT IN PRODUCTION
Electrical Characteristics TA = 25^OC unless otherwise noted
SYM
CHARACTERISTICS
B_V Breakdown Voltage
I_R Reverse Leakage
V_F Forward Voltage
C_T Capacitance
MIN MAX UNITS
TEST CONDITIONS
70
200
500
1.0
1.0
V
I_R = 10 uA
nA V_R = 35 V
mV I_F = 1.0 mA
V
I_F = 10 mA
pF V_R = 20 V
f = 1.0 MHz
© 1997 Fairchild Semiconductor Corporation