MMBD7000 Datasheet, PDF (1/2 Pages) Zowie Technology Corporation – DUAL SWITCHING DIODE

Discrete POWER & Signal
Technologies
MMBD7000
3
SOT-23
2
1
3
5C
1
2
CONNECTION DIAGRAM
3
1
2
High Conductance Ultra Fast Diode
Sourced from Process 1P. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
W_IV
Working Inverse Voltage
70
I_O
Average Rectified Current
200
I_F
if
i_f(surge)
Tstg
T_J
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
600
700
1.0
2.0
-55 to +150
150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
mA
mA
mA
A
A
°C
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JA
Thermal Resistance, Junction to Ambient
MMBD7000*
350
2.8
357
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Units
mW
mW/°C
°C/W
©1997 Fairchild Semiconductor Corporation