MMBD1401_02 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Small Signal Diodes

MMBD1401 / 1403 / 1404 / 1405
3
2
1
SOT-23
3
29
1
2
MARKING
MMBD1401 29 MMBD1403 32
MMBD1404 33 MMBD1405 34
Connection Diagrams
1401 ³
3 ₁₄₀₃
1 2NC
1404 ³
12
3 ₁₄₀₅
12
12
Small Signal Diodes
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
V_RRM
Maximum Repetitive Reverse Voltage
200
I_F(AV)
Average Rectified Forward Current
200
I_FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
1.0
Pulse Width = 1.0 microsecond
2.0
T_stg
Storage Temperature Range
T_J
Operating Junction Temperature
-55 to +150
150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Units
V
mA
A
A
°C
°C
Symbol
P_D
R_θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
350
357
Units
mW
°C/W
Electrical Characteristics T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
V_R
Breakdown Voltage
V_F
Forward Voltage
I_R
Reverse Current
C_T
Total Capacitance
t_rr
Reverse Recovery Time
I_R = 100 µA
I_F = 10 mA
I_F = 50 mA
I_F = 200 mA
I_F = 300 mA
V_R = 120 V
V_R = 175 V
V_R = 0, f = 1.0 MHz
I_F = I_R = 30 mA, I_RR = 3.0 mA,
R_L = 100 Ω
Min
200
760
Max
800
920
1.0
1.1
40
100
2.0
50
Units
V
mV
mV
V
V
nA
nA
pF
ns
2002 Fairchild Semiconductor Corporation
MMBD1400 series, Rev. C1