MJE340 Datasheet, PDF (1/4 Pages) Motorola, Inc – 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS

MJE340
High Voltage General Purpose Applications
• High Collector-Emitter Breakdown Voltage
• Suitable for Transformer
• Complement to MJE350
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T_C=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CEO
I_CBO
I_EBO
h_FE
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
I_C = 1mA, I_B = 0
V_CB = 300V, I_E =0
V_BE = 3V, I_C = 0
V_CE = 10V, I_C = 50mA
Value
300
300
5
500
20
150
- 65 ~ 150
Units
V
V
V
mA
W
°C
°C
Min.
300
30
Max.
100
100
240
Units
V
µA
µA
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001