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| MJE2955T Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,60V,75W) | |||
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MJE2955T
General Purpose and Switching Applications
⢠DC Current Gain Specified to IC = 10 A
⢠High Current Gain Bandwidth Product : fT = 2MHz (Min.)
1
TO-220
1.Base 2.Collector 3.Emitter
PNP Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
- 70
- 60
-5
- 10
-6
75
0.6
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICEO
ICEX1
ICEX2
Collector- Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
IEBO
hFE
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE (on)
* Base-Emitter ON Voltage
fT
Current Gain Bandwidth Product
* Pulse test: PWâ¤300µs, duty cycleâ¤2% Pulse
IC= - 200mA, IB = 0
VCE = - 30V, IB = 0
VCE = - 70V, VBE(off) = 1.5V
VCE = - 70V, VBE(off) = 1.5V
@ TC = 150°C
VEB = - 5V, IC = 0
VCE = - 4V, IC = - 4A
VCE = - 4V, IC = - 10A
IC = - 4A, IB = - 0.4A
IC = - 10A, IB = - 3.3A
VCE = - 4V, IC = - 4A
VCE = - 10V, IC = - 500mA
Min.
-60
Max.
-700
-1
-5
Units
V
µA
mA
mA
-5 mA
20 100
5
-1.1 V
-8
V
-1.8
V
2
MHz
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
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