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| MJE13007F Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER) | |||
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MJE13007F
High Voltage Switch Mode Application
⢠High Speed Switching
⢠Suitable for Switching Regulator and Motor Control
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
V CEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector- Base Voltage
Collector- Emitter Voltage
Emitter- Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
700
400
9
8
16
4
40
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
IEBO
hFE
VCE(sat)
Collector-Base Breakdown Voltage
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Cob
Output Capacitance
fT
Current Gain Bandwidth Product
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
IC = 10mA, IB = 0
VEB = 9V, IC = 0
VCE = 5V, IC = 2A
VCE = 5V, IC = 5A
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 8A, IB = 2A
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
VCB = 10V , f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC =125V, IC = 5A
IB1 = - IB2 = 1A
RL = 50â¦
Min.
400
8
5
4
Typ.
110
Max.
1
60
30
1
2
3
1.2
1.6
1.6
3
0.7
Units
V
mA
V
V
V
V
V
pF
MHz
µs
µs
µs
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
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