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| MJE13006_13007 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – High Voltage Switch Mode Application | |||
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MJE13006/13007
High Voltage Switch Mode Application
⢠High Speed Switching
⢠Suitable for Switching Regulator and Motor Control
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: MJE13006
: MJE13007
VCEO
Collector-Emitter Voltage
: MJE13006
: MJE13007
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter- Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
600
700
300
400
9
8
16
4
80
150
- 65 ~ 150
Units
V
V
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
Collector- Emitter Breakdown Voltage
: MJE13006
: MJE13007
IC = 10mA, IB = 0
IEBO
hFE
VCE(sat)
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
VBE (sat)
*Base-Emitter Saturation Voltage
Cob
Output Capacitance
fT
Current Gain Bandwidth Product
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
* Pulse test: PWâ¤300µs, Duty cycleâ¤2%
VEB = 9V, IC = 0
VCE = 5V, IC = 2A
VCE = 5V, IC = 5A
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 8A, IB = 2A
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
VCB = 10V, f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC = 125V, IC = 5A
IB1 = -IB2 = 1A
RL = 50â¦
Min. Typ. Max. Units
300
V
400
V
1
mA
8
60
5
30
1
V
2
V
3
V
1.2
V
1.6
V
110
pF
4
MHz
1.6
µs
3
µs
0.7
µs
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
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