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| MJE13004 Datasheet, PDF (1/5 Pages) Mospec Semiconductor – POWER TRANSISTORS(4A,300-400V,75W) | |||
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MJE13004/13005
High Voltage Switch Mode Application
⢠High Speed Switching
⢠Suitable for Switching Regulator and Motor Control
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: MJE13004
: MJE13005
VCEO
Collector-Emitter Voltage
: MJE13004
: MJE13005
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
: MJE13004
: MJE13005
Test Condition
IC = 10mA, IB = 0
IEBO
hFE
VCE(sat)
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
VBE (sat)
*Base-Emitter Saturation Voltage
Cob
Output Capacitance
fT
Current Gain Bandwidth Product
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
* Pulse test: PWâ¤300µs, Duty cycleâ¤2% Pulse
VEB = 9V, IC = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 2A
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
IC = 4A, IB = 1A
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
VCB = 10V, f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC = 125V, IC = 2A
IB1 = - IB2 = 0.4A
RL = 62.5â¦
Value
600
700
300
400
9
4
8
2
75
150
- 65 ~ 150
Units
V
V
V
V
V
A
A
A
W
°C
°C
Min. Typ. Max. Units
300
V
400
V
1
mA
10
60
8
40
0.5
V
0.6
V
1
V
1.2
V
1.6
V
65
pF
4
MHz
0.8
µs
4
µs
0.9
µs
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
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