MJD50TF Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

MJD47/50
NPN Epitaxial Silicon Transistor
Features
• High Voltage and High Reliability D-PAK for Surface Mount Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP47 and TIP50
February 2012
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings T_a = 25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Emitter Voltage
: MJD47
: MJD50
V_CEO
Collector-Emitter Voltage
: MJD47
: MJD50
V_EBO
I_C
I_CP
I_B
P_C
T_J
T_STG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T_C = 25°C)
Collector Dissipation (T_a = 25°C)
Junction Temperature
Storage Temperature
Value
350
500
250
400
5
1
2
0.6
15
1.56
150
- 65 to 150
Units
V
V
V
V
V
A
A
A
W
W
°C
°C
Ordering Information
Part Number
MJD47TF
MJD50TF
Marking
MJD47
MJD50
Package
D-PAK
D-PAK
Packing Method
Tape & Reel
Tape & Reel
Remarks
© 2012 Fairchild Semiconductor Corporation
MJD47/50 Rev. B0
1
www.fairchildsemi.com