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| MJD47 Datasheet, PDF (1/4 Pages) Motorola, Inc – NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS | |||
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MJD47/50
High Voltage and High Reliability
D-PAK for Surface Mount Applications
⢠Load Formed for Surface Mount Application (No Suffix)
⢠Straight Lead (I-PAK, â- Iâ Suffix)
⢠Electrically Similar to Popular TIP47 and TIP50
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Emitter Voltage
: MJD47
: MJD50
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Emitter Voltage
: MJD47
: MJD50
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
ICEO
ICES
IEBO
hFE
Parameter
* Collector-Emitter Sustaining Voltage
: MJD47
: MJD50
Collector Cut-off Current
: MJD47
: MJD50
Collector Cut-off Current
: MJD47
: MJD50
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
* Base-Emitter Saturation Voltage
fT
Current Gain Bandwidth Product
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
Test Condition
IC = 30mA, IB = 0
VCE = 150V, IB = 0
VCE = 300V, IB = 0
VCE = 350, VEB = 0
VCE = 500, VEB = 0
VBE = 5V, IC = 0
VCE = 10V, IC = 0.3A
VCE = 10V, IC = 1A
IC = 1A, IB = 0.2A
VCE = 10A, IC = 1A
VCE =10V, IC = 0.2A
Value
350
500
250
400
5
1
2
0.6
15
1.56
150
- 65 ~ 150
Min.
250
400
30
10
10
Units
V
V
V
V
V
A
A
A
W
W
°C
°C
Max. Units
V
V
0.2 mA
0.2 mA
0.1 mA
0.1 mA
1
mA
150
1
V
1.5
V
MHz
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
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