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| MJD45H11TF Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor | |||
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MJD45H11
PNP Epitaxial Silicon Transistor
April 2010
Applications
⢠General Purpose Power and Switching Such as Output or Driver Stages in Applications
⢠D-PAK for Surface Mount Applications
Features
⢠Load Formed for Surface Mount Application (No Suffix)
⢠Straight Lead (I-PAK: â-Iâ Suffix)
⢠Electrically Similar to Popular MJE45H
⢠Fast Switching Speeds
⢠Low Collector Emitter Saturation Voltage
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VEBO
IC
ICP
PC
TJ
TSTG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (TC=25°C)
Collector Dissipation (TA=25°C)
Junction Temperature
Storage Temperature
- 80
-5
-8
- 16
20
1.75
150
- 55 to +150
Units
V
V
A
A
W
W
°C
°C
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus) *Collector-Emitter Sustaining Voltage
ICEO Collector Cut-off Current
IEBO Emitter Cut-off Current
hFE *DC Current Gain
VCE(sat) *Collector-Emitter Saturation Voltage
VBE(on) *Base-Emitter Saturation Voltage
fT
Current Gain Bandwidth Product
Cob
Collector Capacitance
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
IC = - 30mA, IB = 0
VCE = - 80V, IB = 0
VBE = - 5V, IC = 0
VCE = - 1V, IC = - 2A
VCE = - 1V, IC = - 4A
IC = - 8A, IB = - 0.4A
IC = - 8A, IB = - 0.8A
VCE= - 10A, IC = - 0.5A
VCB = - 10V, f = 1MHz
IC = - 5A
IB1= - IB2 = - 0.5A
Min.
- 80
60
40
© 2010 Fairchild Semiconductor Corporation
MJD45H11 Rev. C3
1
Typ.
40
230
135
500
100
Max.
- 10
- 50
Units
V
µA
µA
-1
- 1.5
V
V
MHz
pF
ns
ns
ns
www.fairchildsemi.com
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