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| MJD45H11 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications | |||
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MJD45H11
General Purpose Power and Switching Such
as Output or Driver Stages in Applications
D-PAK for Surface Mount Applications
⢠Load Formed for Surface Mount Application (No Suffix)
⢠Straight Lead (I-PAK: â-Iâ Suffix)
1
⢠Electrically Similar to Popular MJE45H
⢠Fast Switching Speeds
⢠Low Collector Emitter Saturation Voltage
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
VEBO
IC
ICP
PC
TJ
TSTG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
ICEO
IEBO
hFE
*Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
VCE(sat)
*Collector-Emitter Saturation Voltage
VBE(on)
*Base-Emitter Saturation Voltage
fT
Current Gain Bandwidth Product
Cob
Collector Capacitance
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
IC = - 30mA, IB = 0
VCE = - 80V, IB = 0
VBE = - 5V, IC = 0
VCE = - 1V, IC = - 2A
VCE = - 1V, IC = - 4A
IC = - 8A, IB = - 0.4A
IC = - 8A, IB = - 0.8A
VCE= - 10A, IC = - 0.5A
VCB = - 10V, f = 1MHz
IC = - 5A
IB1= - IB2 = - 0.5A
Value
- 80
-5
-8
- 16
20
1.75
150
- 55 ~ 150
Units
V
V
A
A
W
W
°C
°C
Min.
- 80
60
40
Typ.
40
230
135
500
100
Max.
- 10
- 50
Units
V
µA
µA
-1
- 1.5
V
V
MHz
pF
ns
ns
ns
©2003 Fairchild Semiconductor Corporation
Rev. C2, July 2003
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