MJD44H11_09 Datasheet, PDF (1/5 Pages) STMicroelectronics – Complementary power transistors

March 2009
MJD44H11
NPN Epitaxial Silicon Transistor
• General Purpose Power and Switching Such as Output or Driver Stages in Applications
• D-PAK for Surface Mount Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, "- I" Suffix)
• Electrically Similar to Popular MJE44H
• Fast Switching Speeds
• Low Collector Emitter Saturation Voltage
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings T_a = 25°C unless otherwise noted
Symbol
V_CEO
V_EBO
I_C
I_CP
T_J
T_STG
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector-Current (Pulse)
Junction Temperature
Storage Temperature
Thermal Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
P_D
R_θJC
R_θJA
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
T_c = 25°C
T_a = 25°C
Value
80
5
8
16
150
- 65 ~ 150
Max.
20
1.75
6.25
71.4
Units
V
V
A
A
°C
°C
Units
W
°C/W
°C/W
© 2009 Fairchild Semiconductor Corporation
MJD44H11 Rev. B1
1
www.fairchildsemi.com